Temperature dependence of exciton linewidths in InSb quantum wells
Identifieur interne : 010353 ( Main/Repository ); précédent : 010352; suivant : 010354Temperature dependence of exciton linewidths in InSb quantum wells
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Abstract
We studied the linewidths of excitons in InSb/Al0.09In0.91Sb quantum wells between 4.2 and 300 K using Fourier-transform infrared spectroscopy. Even though the exciton binding energy is only about 1 meV, the absorption is excitonic up to room temperature, due to very weak LO-phonon-electron coupling. The electron-phonon coupling constants and exciton binding energies were obtained through fitting the experimental data. We found that acoustic phonon scattering must be taken into account in fitting the experimental exciton linewidths.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Temperature dependence of exciton linewidths in InSb quantum wells</title><author><name sortKey="Dai, N" uniqKey="Dai N">N. Dai</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics and Astronomy and Center for Semiconductor Physics in Nanostructures, The University of Oklahoma, Norman, Oklahoma 73019</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Oklahoma</region></placeName><wicri:cityArea>Department of Physics and Astronomy and Center for Semiconductor Physics in Nanostructures, The University of Oklahoma, Norman</wicri:cityArea></affiliation></author><author><name sortKey="Brown, F" uniqKey="Brown F">F. Brown</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics and Astronomy and Center for Semiconductor Physics in Nanostructures, The University of Oklahoma, Norman, Oklahoma 73019</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Oklahoma</region></placeName><wicri:cityArea>Department of Physics and Astronomy and Center for Semiconductor Physics in Nanostructures, The University of Oklahoma, Norman</wicri:cityArea></affiliation></author><author><name sortKey="Doezema, R E" uniqKey="Doezema R">R. E. Doezema</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics and Astronomy and Center for Semiconductor Physics in Nanostructures, The University of Oklahoma, Norman, Oklahoma 73019</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Oklahoma</region></placeName><wicri:cityArea>Department of Physics and Astronomy and Center for Semiconductor Physics in Nanostructures, The University of Oklahoma, Norman</wicri:cityArea></affiliation></author><author><name sortKey="Chung, S J" uniqKey="Chung S">S. J. Chung</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics and Astronomy and Center for Semiconductor Physics in Nanostructures, The University of Oklahoma, Norman, Oklahoma 73019</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Oklahoma</region></placeName><wicri:cityArea>Department of Physics and Astronomy and Center for Semiconductor Physics in Nanostructures, The University of Oklahoma, Norman</wicri:cityArea></affiliation></author><author><name sortKey="Santos, M B" uniqKey="Santos M">M. B. Santos</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics and Astronomy and Center for Semiconductor Physics in Nanostructures, The University of Oklahoma, Norman, Oklahoma 73019</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Oklahoma</region></placeName><wicri:cityArea>Department of Physics and Astronomy and Center for Semiconductor Physics in Nanostructures, The University of Oklahoma, Norman</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">01-0134458</idno><date when="2001-03-15">2001-03-15</date><idno type="stanalyst">PASCAL 01-0134458 AIP</idno><idno type="RBID">Pascal:01-0134458</idno><idno type="wicri:Area/Main/Corpus">011862</idno><idno type="wicri:Area/Main/Repository">010353</idno></publicationStmt><seriesStmt><idno type="ISSN">1098-0121</idno><title level="j" type="abbreviated">Phys. rev., B, Condens. matter mater. phys.</title><title level="j" type="main">Physical review. B, Condensed matter and materials physics</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Aluminium compounds</term><term>Electron-phonon interactions</term><term>Excitons</term><term>Experimental study</term><term>Fourier transform spectra</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Infrared spectra</term><term>Line widths</term><term>Semiconductor quantum wells</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>7135C</term><term>6320K</term><term>7321</term><term>Etude expérimentale</term><term>Indium composé</term><term>Semiconducteur III-V</term><term>Puits quantique semiconducteur</term><term>Exciton</term><term>Spectre transformée Fourier</term><term>Spectre IR</term><term>Largeur raie</term><term>Interaction électron phonon</term><term>Aluminium composé</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We studied the linewidths of excitons in InSb/Al<sub>0.09</sub>In<sub>0.91</sub>Sb quantum wells between 4.2 and 300 K using Fourier-transform infrared spectroscopy. Even though the exciton binding energy is only about 1 meV, the absorption is excitonic up to room temperature, due to very weak LO-phonon-electron coupling. The electron-phonon coupling constants and exciton binding energies were obtained through fitting the experimental data. We found that acoustic phonon scattering must be taken into account in fitting the experimental exciton linewidths.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>1098-0121</s0></fA01><fA02 i1="01"><s0>PRBMDO</s0></fA02><fA03 i2="1"><s0>Phys. rev., B, Condens. matter mater. phys.</s0></fA03><fA05><s2>63</s2></fA05><fA06><s2>11</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Temperature dependence of exciton linewidths in InSb quantum wells</s1></fA08><fA11 i1="01" i2="1"><s1>DAI (N.)</s1></fA11><fA11 i1="02" i2="1"><s1>BROWN (F.)</s1></fA11><fA11 i1="03" i2="1"><s1>DOEZEMA (R. E.)</s1></fA11><fA11 i1="04" i2="1"><s1>CHUNG (S. J.)</s1></fA11><fA11 i1="05" i2="1"><s1>SANTOS (M. B.)</s1></fA11><fA14 i1="01"><s1>Department of Physics and Astronomy and Center for Semiconductor Physics in Nanostructures, The University of Oklahoma, Norman, Oklahoma 73019</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></fA14><fA20><s2>115321-115321-6</s2></fA20><fA21><s1>2001-03-15</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>144 B</s2></fA43><fA44><s0>8100</s0><s1>© 2001 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>01-0134458</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Physical review. B, Condensed matter and materials physics</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>We studied the linewidths of excitons in InSb/Al<sub>0.09</sub>In<sub>0.91</sub>Sb quantum wells between 4.2 and 300 K using Fourier-transform infrared spectroscopy. Even though the exciton binding energy is only about 1 meV, the absorption is excitonic up to room temperature, due to very weak LO-phonon-electron coupling. The electron-phonon coupling constants and exciton binding energies were obtained through fitting the experimental data. 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